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Aluminum Nitride

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation  
AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd:
YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas;
the target was an aluminum high purity (99.99%). The films were deposited with a laser
fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was
300 °C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured
by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the
morphology and composition of the films were studied using scanning electron microscopy
(SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance
spectra and color coordinates of the films were obtained by optical spectral reflectometry
technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In
this work, a clear dependence of the reflectance, dominant wavelength and color purity was
found in terms of the applied pressure to the AlN films. A reduction in reflectance of about
55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals
with the formation of AlN thin films as promising materials for the integration of SAW devices
on Si substrates due to their good piezoelectric properties and the possibility of deposition at
low temperature compatible with the manufacturing of Si integrated circuits.
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